基于自注入耦合技术的超低相位噪声QVCO

摘要

基于标准0.18 μm CMOS工艺,提出并验证了一种改进的用于多相位振荡器的耦合方法.将一种先进的自注入耦合(SIC)技术,用于耦合两个电流复用差分压控振荡器(VCO).相比较于传统的并联耦合正交VCO(QVCO)而言,所提出的采用SIC技术的QVCO在没有增加功耗的前提下,表现出了更低的相位噪声.所提出的SIC-QVCO在16.41 GHz振荡频率下,相位噪声为-119.7 dBc/Hz@1 MHz,并且调谐范围高达1.66 GHz,直流电源电压和电流分别为1.8V和5.28 mA,芯片尺寸为0.3 mm×0.9 mm.%An improved coupled method for multiphase oscillator is proposed and demonstrated in a standard 0.18 μm CMOS technology.A self-injection-coupling (SIC) technique is used to couple two currentreused differential voltage-controlled oscillators (VCOs).Compared with the conventional parallel-coupled quadrature VCO (QVCO),the proposed QVCO using the SIC technique presents low phase noise without increasing dc power consumption.At the oscillating frequency of 16.41 GHz,the proposed SIC-QVCO shows a low phase noise of-119.7 dBc/Hz at 1-MHz offset frequency and a tuning range of 1.66 GHz.The dc supply voltage and current consumption are 1.8 V and 5.28 mA respectively.The chip size of the proposed SIC-QVCO is 0.3 mm×0.9 mm.