Fabrication Process and 110GHz Measurement Result of MS-to-CPW RF-Via Transition for RF-MEMS Devices Packaging Applications

摘要

This paper presents the fabrication process of RF-via (0-level) and flip-chip bump (1-level) transitions for applications of packaging MS (microstrip) RF-MEMS devices. The interconnect structure with MS-to-CPW transition between GaAs MEMS substrate and Al_2O_3 motherboard was in-house fabricated. A novel fabrication process for RF-MEMS packaging is in detail. After fabrication, the samples were measured up to 110GHz using on-wafer probing measurement. From the measured results, the insertion loss of entire interconnect structure is better than -2dB up to 100GHz, documenting the feasibility for millimeter-wave RF-MEMS devices packaging applications.