The Effects of SF_6 Plasma and in-situ N2 Plasma Treatment on Gate Leakage, Subthreshold Slope, Current Collapse in AlGaN/GaN HEMTs

摘要

We investigated the removal of SiN_x pre-passivation layer and the SiN_x re-deposition process with surface treatments. By using the optimized SF_6 plasma and insitu N_2 plasma treatments, the gate leakage current was reduced to 67 nA/mm at the gate voltage of -100 V, and the subthreshold slope was improved to 71 mV/dec. The breakdown voltage of 220 V and the specific onresistance of 0.52 mΩ·cm~2 were achieved for the gate-todrain distance of 3 μm, and current collapse phenomena were also improved. For the gate-to-drain distance of 12μm, the breakdown voltage of 1390 V and the specific onresistance of 1.86 mΩ·cm~2 were achieved.