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机译:极低{V} _ {sf {{th}}}的AlGaN / GaN MIS-HEMT,具有原位预沉积等离子体氮化和LPCVD-Si3N4栅极绝缘体的磁滞和电流崩塌
Key Laboratory of Nanodevices and Applications, Suzhou Institute of Nano-Tech and Nano-bionics, Chinese Academy of Sciences, Suzhou, China;
Key Laboratory of Nanodevices and Applications, Suzhou Institute of Nano-Tech and Nano-bionics, Chinese Academy of Sciences, Suzhou, China;
Key Laboratory of Nanodevices and Applications, Suzhou Institute of Nano-Tech and Nano-bionics, Chinese Academy of Sciences, Suzhou, China;
Key Laboratory of Nanodevices and Applications, Suzhou Institute of Nano-Tech and Nano-bionics, Chinese Academy of Sciences, Suzhou, China;
Key Laboratory of Nanodevices and Applications, Suzhou Institute of Nano-Tech and Nano-bionics, Chinese Academy of Sciences, Suzhou, China;
Nano-X, Suzhou Institute of Nano-Tech and Nano-Bionics, Chinese Academy of Sciences, Suzhou, China;
Key Laboratory of Nanodevices and Applications, Suzhou Institute of Nano-Tech and Nano-bionics, Chinese Academy of Sciences, Suzhou, China;
Key Laboratory of Nanodevices and Applications, Suzhou Institute of Nano-Tech and Nano-bionics, Chinese Academy of Sciences, Suzhou, China;
Key Laboratory of Nanodevices and Applications, Suzhou Institute of Nano-Tech and Nano-bionics, Chinese Academy of Sciences, Suzhou, China;
Key Laboratory of Nanodevices and Applications, Suzhou Institute of Nano-Tech and Nano-bionics, Chinese Academy of Sciences, Suzhou, China;
Key Laboratory of Nanodevices and Applications, Suzhou Institute of Nano-Tech and Nano-bionics, Chinese Academy of Sciences, Suzhou, China;
Key Laboratory of Nanodevices and Applications, Suzhou Institute of Nano-Tech and Nano-bionics, Chinese Academy of Sciences, Suzhou, China;
Key Laboratory of Nanodevices and Applications, Suzhou Institute of Nano-Tech and Nano-bionics, Chinese Academy of Sciences, Suzhou, China;
Key Laboratory of Nanodevices and Applications, Suzhou Institute of Nano-Tech and Nano-bionics, Chinese Academy of Sciences, Suzhou, China;
School of Electronics and Information, Hangzhou Dianzi University, Hangzhou, China;
Key Laboratory of Nanodevices and Applications, Suzhou Institute of Nano-Tech and Nano-bionics, Chinese Academy of Sciences, Suzhou, China;
Key Laboratory of Nanodevices and Applications, Suzhou Institute of Nano-Tech and Nano-bionics, Chinese Academy of Sciences, Suzhou, China;
Plasmas; Logic gates; Hysteresis; Gallium nitride; Threshold voltage; Aluminum gallium nitride; Wide band gap semiconductors;
机译:600V常关$ {rm SiN} _ {x} $ / AlGaN / GaN MIS-HEMT,具有大栅极摆幅和低电流塌陷
机译:具有多层栅绝缘体的AlGaN / GaN MIS-HEMT的截止态漏极电流和击穿电压
机译:具有原位Si_3N_4 / Al_2O_3双层栅极电介质的AlGaN / GaN MIS-HEMT上正栅极偏置后的缓慢去陷阱现象分析
机译:SF_6等离子体和原位N2等离子体处理对栅极泄漏,亚阈值坡度,血管/ GaN Hemts的电流塌陷的影响
机译:研究常关模式的AlGaN / GaN MOS HEMT器件,该器件利用栅极后退和p-GaN栅极结构以及带有醛生长的高k栅极绝缘体来实现高功率应用。
机译:氧等离子体处理对采用PECVD SiO2栅极绝缘体的原位SiN / AlGaN / GaN MOSHEMT的影响
机译:利用等离子体增强aLD沉积al2O3改善alGaN / GaN mIs-HEmT栅极结构
机译:自对准aLD alOx T栅极绝缘体,用于siNx钝化alGaN / GaN HEmT中的栅极漏电流抑制