Polycrystalline layers of silicon-germanium alloy for uncooled IR bolometers

摘要

Polycrystalline layers of Si_(1-x)Ge_x, of varying germanium fraction, in situ doped with boron, were received by molecular-beam deposition on layers of the silicon oxide and silicon nitride at temperatures <500°C. The structural properties of the films were studied, the dependences of the resistivity on the temperature and the low-frequency noise were measured. It has been demonstrated that, the temperature coefficient of resistance (TCR) in poly SiGe deposited on different dielectric coverings amounts to (3-4)%/grad and depends on resistance and grain size.