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Plasma etching of polymers like SU8 and BCB

机译:等离子体蚀刻SU8和BCB等聚合物

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摘要

Polymers with high viscosity, like SU8 and BCB, play a dominant role in MEMS application. Their behavior in a well defined etching plasma environment in a RIE mode was investigated. The 40.68 MHz driven bottom electrode generates higher etch rates combined with much lower bias voltages by a factor of ten or a higher efficiency of the plasma with lower damaging of the probe material. The goal was to obtain a well-defined process for the removal and structuring of SU8 and BCB using fluorine/oxygen chemistry, defined using variables like electron density and collision rate. The plasma parameters are measured and varied using a production proven technology called SEERS (Self Excited Electron Resonance Spectroscopy). Depending on application and on Polymer several metals are possible (e.g., gold, aluminum). The characteristic of SU8 and BCB was examined in the case of patterning by dry etching in a CF_4/O_2 chemistry. Etch profile and etch rate correlate surprisingly well with plasma parameters like electron density and electron collision rate, thus allowing to define to adjust etch structure in situ with the help of plasma parameters.
机译:具有高粘度的聚合物,如SU8和BCB,在MEMS应用中起主要作用。研究了在RIE模式下定义识别的蚀刻等离子体环境中的行为。 40.68MHz驱动的底部电极产生更高的蚀刻速率,其较低的偏置电压与较低的等离子体的较高效率较高,探针材料的损坏较低。目标是通过使用氟/氧化学获得使用氟/氧化学的SU8和BCB的去除和结构的明确定义方法,使用电子密度和碰撞速率等变量定义。使用称为SEERS(自激电子共振光谱)的生产经过验证的技术来测量并变化等离子体参数。取决于施用和聚合物,几种金属是可能的(例如,金,铝)。在CF_4 / O_2化学中通过干蚀刻进行图案化的情况下检查SU8和BCB的特征。蚀刻轮廓和蚀刻速率与电子密度和电子碰撞速率等等离子体参数相关,从而允许在等离子体参数的帮助下定义以原位调节蚀刻结构。

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