REDUCTION OF PASS-GATE LEAKAGE BY SILICON-THICKNESS THINNING IN DOUBLE-GATE MOSFETS

摘要

This paper shows the reduction of Pass-Gate Leakage (PGL) by silicon-thickness thinning in Double-Gate (DG) MOSFET. The PGL current is the anomalous leakage current induced by the source which is unique to body-floating devices like DG MOSFET. Thinning down the silicon-thickness of DG MOSFET suppresses the body potential increase which causes the PGL current, and it takes longer time to charge the body fully, namely, the source-body junction comes to thermal equilibrium, in which the charge transported by the PGL current reaches its maximum (the worst case). Even if the worst case, in DG MOSFET which has thin silicon-thickness, the PGL current reduces faster together with the body potential. The charge transported by the PGL current at the worst case has been reduced to about 10.7% by silicon-thickness thinning 100nm to 10nm.