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Magnetotransport measurement of effective mass, quantum scattering time, and alloy scattering potential of polarization-doped 3D electron slabs in graded-AlGaN

机译:磁通量测量升降 - AlGaN中极化掺杂3D电子板的有效质量,量子散射时间和合金散射电位

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By applying the technique of polarization bulk-doping in graded AlGaN, it has been possible to create high-mobility three-dimensional electron slabs. Such 3D electron slabs are observed to exhibit clearly resolved Shubnikov de-Haas oscillations. From a temperature-dependent study of the oscillations, we measure the effective mass (m~* = 0.21m_0) and the quantum scattering time (τ_q = 0.3 ps) of carriers in the slabs. An analysis of the ratio of quantum and classical scattering times with the scattering mechanisms leads to the first direct measurement of the alloy scattering potential in the AlGaN system (V_0 = 1.8 eV).
机译:通过在梯度AlGaN中应用偏振体掺杂技术,可以创建高迁移率的三维电子板坯。观察到这种3D电子板表现出明确解决的Shubnikov De-Haas振荡。从振荡的温度依赖性研究,我们测量板坯中载体的有效质量(M〜* = 0.21M)和量子散射时间(τ_q= 0.3 ps)。对散射机构的量子和经典散射时间的比率分析导致AlGaN系统(V_0 = 1.8eV)中合金散射电位的第一直接测量。

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