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Scattering times in AlGaN/GaN two-dimensional electron gas from magnetotransport measurements

机译:磁迁移测量在AlGaN / GaN二维电子气中的散射时间

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The various scattering times of two-dimensional electron gas were investigated in modulation-doped Al_(0.22)Ga_(0.78)N/GaN quantum wells by means of magnetotransport measurements. The ratio of transport and quantum scattering times, τ_t/τ_q ~ 1, shows that the dominant mobility-limiting mechanisms are short-range scattering potentials. The low-field magnetoresistance shows the weak antilocalization and localization phenomenon from which the spin-orbit scattering and inelastic scattering times are obtained. The inelastic scattering time is found to follow the T~(-1) law, indicating that electron-electron scattering with small energy transfer is the dominant inelastic process.
机译:通过磁传输测量,研究了调制掺杂的Al_(0.22)Ga_(0.78)N / GaN量子阱中二维电子气的各种散射时间。传输和量子散射时间之比τ_t/τ_q〜1表明,主要的迁移率限制机制是短程散射势。低场磁阻表现出较弱的抗局部化和局部化现象,由此可以得到自旋轨道散射和非弹性散射时间。发现非弹性散射时间遵循T〜(-1)定律,表明能量转移小的电子-电子散射是主要的非弹性过程。

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