Effects of DC bias on growth and emission characteristics of carbon nanotubes grown by rf plasma enhanced chemical vapor deposition

摘要

The growth of carbon nanotubes (CNTs) was carried out using radio frequency plasm enhanced chemical vapor disposition (rf PECVD) system equipped with de bias for the directional growth. We investigated the effects of dc bias on the directionality, morphology, and microstructure of CNTs with optimization of growth parameters. We also studied the relation between emission properties and the directionality of CNTs grown under different dc bias voltages.