Resonant field emission from amorphous diamond (a-D) film was theoretically predicted in early literatures [1, 2]. So far, there is no report on the experimental evidence to support the prediction. Two major difficulties hampered the experimental investigation. Firstly, lack of control in the film thickness. Secondly, lack of samples that has required field enhancement, as proposed by early authors [1, 2], resonant tunneling could only occur at high local electric field, i.e., ～10~4MV/m. In the present work, we designed a testing device using a recent developed technique [3, 4] to meet the demands. The device has the following features, (i) a single Si emitter having sharp tip (Fig. 1); (ii) ultra-thin (～2nm) a-D coating highly localized on the tip apex (inset of Fig. 1). Such a tip has high local field enhancement at the film surface, i.e. the □-factor being in order of 100.
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