~(60)Coy Irradiation Effects on I-V Characteristics of AlGaN/GaN Schottky Diodes

摘要

AlGaN/GaN Schottky diodes of variable area have been exposed to gamma radiation. These diodes have been irradiated up to a cumulative dose of 10~4 Gy. The effect of gamma irradiation on the current-voltage (I-V) characteristics of the diodes before and after gamma exposure has been investigated. The I-V characteristics show a shift in the turn-on voltage and improvement in the reverse Schottky current after the irradiation. Parameters like Schottky barrier height and ideality factor has also been calculated from the diode characteristics.