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CMP process control Via in-situ and real-time chemical endpoint detection

机译:CMP过程通过原位和实时化学端点检测控制

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A proven technology has been developed for monitoring and controlling the CMP processes involving a stop at a layer which contains nitride. This technology is based on the fact that a measurable amount of ammonia (NH{sub}3) will be generated during the nitride polishing. The detection of ammonia is accomplished by converting ammonia to nitrogen monoxide (NO) catalytically, then reacting the NO with ozone (O{sub}3) to form excited state nitrogen dioxide (NO{sub}2) followed by detecting its light emission. The endpoint detection system is designed to analyze and to measure these very small changes of ammonia concentration within the slurry with high velocity (~1 sec) and accuracy (ppb). The system is already approved for BPSG and STI CMP processes on different polisher types -Ebara and SpeedFam-IPEC (Westech and Auriga C).
机译:已经开发了一种经过验证的技术,用于监测和控制涉及含有氮化物层的止挡的CMP过程。该技术基于以下事实:在氮化物抛光期间将产生可测量的氨(NH {Sub} 3)。通过将氨催化转化为氮一氧化物(NO)来实现氨的检测,然后用臭氧(O×} 3)反应,形成激发态氮二氧化氮(NO {Sub} 2),然后检测其发光。端点检测系统旨在分析,并测量具有高速(〜1秒)和精度(PPB)的浆料内氨浓度的这些非常小的变化。该系统已经批准用于不同抛光器类型的BPSG和STI CMP进程-eBara和Speedfam-Ipec(Westech和Auriga C)。

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