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The interaction of hot electrons and hot holes on the degradation of p-channel metal oxide semiconductor field effect transistors.

机译：热电子和热孔对P沟道金属氧化物半导体场效应晶体管劣化的相互作用。

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《IEEE International Caracas Conference on Devices, Circuits and Systems 》|2002年||共3页
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Yang Z.J.; Guarin F.J.; Rauch S.E.; Institute of Electric and Electronic Engineer;
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中图分类 TN7-53;
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1. Enhanced Hot-Hole Induced Degradation of Strained p-Channel Metal Oxide Semiconductor Transistors in Complementary Metal Oxide Semiconductor Technology with 2.0 nm Gate Oxide [J] . Kwang-Seng See, Wai-Shing Lau, Jae Gon Lee, Japanese Journal of Applied Physics. Part 1, Regular Papers, Brief Communications & Review Papers . 2005 ,第8期

机译：在互补金属氧化物半导体技术中采用2.0 nm栅极氧化物增强应变的p沟道金属氧化物半导体晶体管的热孔诱导降解
2. Hot-carrier-induced linear drain current and threshold voltage degradation for thin layer silicon-on-insulator field P-channel lateral double-diffused metal-oxide-semiconductor [J] . Xin Zhou, Ming Qiao, Yitao He, Applied Physics Letters . 2015 ,第20期

机译：绝缘体上薄硅场P沟道横向双扩散金属氧化物半导体的热载流子线性漏极电流和阈值电压降级
3. Processing dependences of channel hot-carrier degradation on strained-Si p-channel metal-oxide semiconductor field-effect transistors [J] . E. Amat, J. Martin-Martinez, M. B. Gonzalez, Journal of Vacuum Science & Technology . 2011 ,第1期

机译：沟道热载流子退化对应变Si p沟道金属氧化物半导体场效应晶体管的处理依赖性
4. The interaction of hot electrons and hot holes on the degradation of p-channel metal oxide semiconductor field effect transistors. [C] . Yang Z.J., Guarin F.J., Rauch S.E., IEEE International Caracas Conference on Devices, Circuits and Systems . 2002

机译：热电子和热孔对P沟道金属氧化物半导体场效应晶体管劣化的相互作用。
5. Photophysical studies of chromium sensitizers designed for excited state hole transfer to semiconductors and sequential hole/electron transfers from photoexcited cadmium sulfide nanorods to mononuclear ruthenium water-oxidation catalysts. [D] . Tseng, Huan-Wei. 2013

机译：铬敏化剂的光物理研究，用于激发态空穴向半导体的转移以及空穴/电子从光激发的硫化镉纳米棒到单核钌水氧化催化剂的顺序转移。
6. P-Channel InGaN/GaN heterostructure metal-oxide-semiconductor field effect transistor based on polarization-induced two-dimensional hole gas [O] . Kexiong Zhang, Masatomo Sumiya, Meiyong Liao, -1

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7. Complementary Metal Oxide Semiconductor Image Sensor Using a Gate/Body-Tied P-Channel Metal Oxide Semiconductor Field Effect Transistor-Type Photodetector for High-Speed Binary Operation [O] . 2018

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8. Gamma, electron, and proton radiation exposures of P-channel, enhancement, metal oxide semiconductor, field effect transistors [R] . Wannemacher, H. E. 1965

机译：G沟道，电子辐射和质子辐射暴露于p沟道，增强，金属氧化物半导体，场效应晶体管

The interaction of hot electrons and hot holes on the degradation of p-channel metal oxide semiconductor field effect transistors.

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