LONGITUDINAL PHOTOCONDUCTIVITY MEASUREMENTS OF GaAs/AlGaAs (V-GROOVED) QUANTUM WIRES

机译：GaAs / AlGaAs（V-Co-Groved）量子线的纵向光电导测量

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Photoconductivity (PC) measurements of GaAs/AIGaAs quantum wires (QWRs) are carried out at 65 K in a direction parallel to the wires. The samples are grown on V-shaped GaAs substrates by MOCVD. A contribution of the QWRs to the PC is observed revealing small structures superimposed on a large background.

机译：GaAs / AIGAAS量子线（QWR）的光电导性（PC）测量在平行于电线的方向上以65k进行。通过MOCVD在V形GaAs基材上生长样品。观察到QWRS对PC的贡献，揭示了在大背景上叠加的小型结构。

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《Workshop on Nanoscience nanotechnology : Nanostructured materials application and innovation transfer》|2002年||共2页
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作者
M. Saraydarov; V. Donchev; K. Germanova; Xue-Lun Wang; Seong-Jin Kim; Mutsuo Ogura;
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中图分类特种结构材料;
关键词
quantum wires; longitudinal photoconductivity; GaAs;

机译：量子线;纵向光电导率;GaAs;

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1. Optical and electronic properties of single modulation doped GaAs/AlGaAs V-grooved quantum wire modified by ion implantation [J] . HUANG Shaohua, CHEN Zhanghai, BAI Lihui, Science in China. Series G, Physics & Astronomy . 2005,第3期

机译：离子注入修饰的单调制掺杂GaAs / AlGaAs V形槽量子线的光学和电子性能
2. Optical and electronic properties of single modulation doped GaAs/AlGaAs V-grooved quantum wire modified by ion implantation [J] . HUANG Shaohua, CHEN Zhanghai, BAI Lihui, 中国科学:物理学力学天文学（英文版） . 2005,第003期

机译：通过离子注入改性单调制掺杂GaAs / AlgaAs V沟槽量子线的光学和电子性能
3. High characteristic temperature (To= 322 K near room temperature) of V-grooved AlGaAs-GaAs quantum wire diode lasers [J] . T.G. Kim, M. Ogura Solid-State Electronics . 2000,第1期

机译：V槽AlGaAs-GaAs量子线二极管激光器的特征温度高（在室温附近= 322 K）
4. LONGITUDINAL PHOTOCONDUCTIVITY MEASUREMENTS OF GaAs/AlGaAs (V-GROOVED) QUANTUM WIRES [C] . M. Saraydarov, V. Donchev, K. Germanova, Workshop on Nanoscience nanotechnology : Nanostructured materials application and innovation transfer . 2002

机译：GaAs / AlGaAs（V-Co-Groved）量子线的纵向光电导测量
5. Quantum Transport in the AlGaAs/GaAs Two Dimensional Electron System at Half-Fillings [D] . Qian, Qi. 2018

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6. Theoretical study of strain-dependent optical absorption in a doped self-assembled InAs/InGaAs/GaAs/AlGaAs quantum dot [O] . Tarek A Ameen, Hesameddin Ilatikhameneh, Archana Tankasala, 2018

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7. Evidence of blocking effect on carrier trapping process by necking region in very narrow AlGaAs/GaAs V-grooved quantum wire structure [O] . X. Q. Liu, A. Sasaki, N. Ohno, 2001

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LONGITUDINAL PHOTOCONDUCTIVITY MEASUREMENTS OF GaAs/AlGaAs (V-GROOVED) QUANTUM WIRES

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