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Evidence of blocking effect on carrier trapping process by necking region in very narrow AlGaAs/GaAs V-grooved quantum wire structure

机译：基于窄藻/ GaAs V沟道量子线结构颈缩区域封闭区域阻断效应的证据

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X. Q. Liu; A. Sasaki; N. Ohno; Z. F. Li; W. Lu; S. C. Shen; Y. Fu; M. Willander; H. H. Tan; C. Jagadish;
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1. Performance of GaAs-AlGaAs V-grooved inner stripe quantum-well wire lasers with different current blocking configurations [J] . Tae Geun Kim, Kyung Hyun Park IEEE Journal of Quantum Electronics . 1998,第8期

机译：不同电流阻挡结构的GaAs-AlGaAs V形沟槽内条纹量子阱线激光器的性能
2. Performance of GaAs-AlGaAs V-grooved inner stripe quantum-well wirelasers with different current blocking configurations [J] . Tae Geun Kim, Kyung Hyun Park, Sung-Min Hwang, IEEE Journal of Quantum Electronics . 1998,第8期

机译：不同电流阻挡结构的GaAs-AlGaAs V形沟槽内条纹量子阱线控激光器的性能
3. Optical and electronic properties of single modulation doped GaAs/AlGaAs V-grooved quantum wire modified by ion implantation [J] . HUANG Shaohua, CHEN Zhanghai, BAI Lihui, Science in China. Series G, Physics & Astronomy . 2005,第3期

机译：离子注入修饰的单调制掺杂GaAs / AlGaAs V形槽量子线的光学和电子性能
4. Carrier relaxation process of V-grooved AlGaAs/GaAs quantum wire modified by selective implantation-induced intermixing [C] . Xingquan Liu, Shanghai Institute of Technical Physics, Shanghai, Conference on photodetectors: Materials and devices . 1999

机译：选择性注入诱导混合修饰的V槽AlGaAs / GaAs量子线的载流子弛豫过程
5. GaAs/AlGaAs Bipolar Transistor Waveguide Structure Carrier-Injected Optical Modulator/Switch利用統計を見る [D] . Okada Yoshitaka 1990

机译：GaAs / AlGaAs双极晶体管波导结构载流子注入的光调制器/开关查看用法统计
6. Intersubband terahertz transitions in Landau level system of cascade GaAs/AlGaAs quantum well structures in strong tilted magnetic field [O] . Maksim P Telenkov, Yury A Mityagin, Petr F Kartsev 2012

机译：强倾斜磁场中级联GaAs / AlGaAs量子阱结构的Landau能级系统中的子带太赫兹跃迁
7. Optical properties of arsenic ions implanted GaAs/AlGaAs V-grooved quantum wires [O] . Zhao, QX, Willander, M, Lu, W, 2000

机译：砷离子注入GaAs / AlGaAs V形槽量子线的光学性质

Evidence of blocking effect on carrier trapping process by necking region in very narrow AlGaAs/GaAs V-grooved quantum wire structure

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