High-temperature operation of mid-infrared (λ=4-5 μm) vertical and lateral InAs/GaAs/AlGaAs quantum dot infrared photodetectors

摘要

Infrared (IR) detection has sundry applications from military targeting Systems to the observation of stellar phenomena to professional photography. State-of-the-art IR photon detection is dominated by mercury cadmium telluride (MCT) detectors and quantum well infrared photodetectors (QWIPs). While these devices can yield specific detectivities (D*) on the order of 10{sup}11 cmHz{sup}(1/2)/W (Jones), they generally require an operating temperature of 80K or less1. Therefore, it is desirable to develop a high temperature IR photon detection technology, which would lend itself more readily to lightweight, compact, inexpensive IR cameras.