首页> 外文会议>International conference on molecular beam epitaxy >Lattice-matched In_xGa_(1-x)As/In_xAl_(1-x)As quantum wells (x = 0.18 and 0.19) grown on (4 1 1)A- and (1 00)-oriented InGaAs ternary substrates by molecular beam epitaxy
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Lattice-matched In_xGa_(1-x)As/In_xAl_(1-x)As quantum wells (x = 0.18 and 0.19) grown on (4 1 1)A- and (1 00)-oriented InGaAs ternary substrates by molecular beam epitaxy

机译:用分子束外延产生的量子阱(x xAl_(1-x)作为量子孔(x = 0.18和0.19)作为量子孔(x = 0.18和0.19),通过分子束外延生长(411) - 和(1 00)的Ingaas三元基质

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High-optical quality lattice-matched In_xGa_(1-x)As/In_xAl_(1-x)As quantum wells (QWs) with indium contents of x = 0.18-0.19 have been successfully grown on (4 1 1)A- and (1 00)-oriented InGaAs ternary substrates by molecular beam epitaxy. Strong photoluminescence (PL) with a narrow linewidth was observed from both (41 1)A and (100) QWs at 12K. The peak energy of PL from QWs had a good correlation with the calculated exciton emission energy based on the band parameter of the InGaAs well layers and InAlAs barrier layers. The result indicates that the (41 1)A and (1 00) InGaAs/InAlAs QWs on InGaAs ternary substrates have 0.2eV larger energy gap difference between their well and barrier materials than GaAs/AlAs QWs on GaAs binary substrates or InGaAs/InAlAs QWs on InP binary substrates. In addition, the (4 1 1)A In_(0.18)Ga_(0.82)As/In_(0.18)Al_(0.82)As QWs had a narrower PL linewidth than (1 00) QWs indicating that smoother interfaces were realized in the (4 1 1)A QWs.
机译:作为x = 0.18-0.19的铟含量的量子阱(qws)为量子阱(qws)的高光学质量晶格匹配的in_xga_(1-x)匹配为量子阱(qws)已成功生长(4 1)A-和( 1 00)通过分子束外延的Ingaas三元基质。从12K的(41 1)A和(100)QWS观察到具有窄线宽的强光致发光(PL)。基于InGaAs阱层和Inalas屏障层的带参数,来自QW的PL的峰值能量与计算的激子发射能量良好。结果表明(411)A和(1 00)InGaAs三元基板上的IngaAs / Inalas QWS在GaAs二进制基板上的GaAs / AlaS QWS或IngaAs / Inalas QWS上具有0.2eV的井和屏障材料之间的更大的能隙差在INP二进制基板上。另外,(41 1)IN_(0.18)GA_(0.82)AS / IN_(0.18)AL_(0.82),因为QWS具有比(1 00)QWS的较窄的PL线宽,指示在(()中实现了更平稳的接口( 4 1 1)qws。

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