SPECIAL FREQUENCY-DEPENDENT TRANSIENT MECHANISMS IN SOI MOSFETS MEASURED BY A NEW TECHNIQUE: THE AVERAGE TRANSIENT CURRENT

摘要

This paper presents a new method for the characterization of frequency-dependent transient phenomena in SOI MOSFETs: the mean current measurement. As an application, the deep depletion regime, corres-ponding to a commuting signal applied to the gate, is discussed. In particular, the conditions for the appearance of a negative body bias are addressed.