PERFORMANCE OF DOUBLE-GATE SOI NMOSFETs AT LOW TEMPERATURE.

机译：低温下双门SOI NMOSFET的性能。

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The performance of double-gate (GAA) SOI nMOSFETs is studied from room to liquid nitrogen temperature. The devices under investigation are n-channel inversion-mode transistors. The behavior of the device parameters such as the subthreshold swing, the threshold voltage and mobility are analyzed.

机译：从房间研究了双栅极（GaA）SOI NMOSFET的性能，以液氮温度。正在研究的设备是N沟道反转模式晶体管。分析了诸如亚阈值摆动的装置参数，阈值电压和移动性的行为。

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《International Symposium on Silicon-on-Insulator Technology and Devices》|2001年||共6页
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D. Flandre; J.P. Colinge; S. Cristoloveanu; A. Vandooren;
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中图分类 TM211-53;
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PERFORMANCE OF DOUBLE-GATE SOI NMOSFETs AT LOW TEMPERATURE.

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