The impact of total ionizing dose on RF performance of 130 nm PD SOI 1/O nMOSFETs

摘要

In this paper, the degradation mechanism of RF performance of 130 nm T-gate partially depleted (PD) silicon-oninsulator input-output nMOSFETs at different total ionizing dose levels has been investigated. RF figures of merit (the cut-off frequency f(T), maximum oscillation frequency f(max)) show significant degradation, about 26% and 80% respectively. The variation of the small signal parameters (output conductance (g(ds)), transconductance (g(m)), gate resistance (R-g) and capacitance (C-gg)) at different TID levels has been discussed. TID-induced trapped charges at gate oxide and STI corner increase the vertical electric field, which leads to the broadening of depletion layer and the narrowing of neutral body region. Furthermore, the small signal parameters appear more complex degradation in the wide frequency range. A model which considers the body and substrate parasitic effects is presented, and the results of ADS simulation based on this model are consistent with the experimental results.