This paper presents a simulation method for a wide variety of ultra small devices. It combines TSUPREM-4, MEDICI and the self-consistent solution of the Poisson and Schroedinger equations considering not only the fabrication process but also quantum mechanical effects. This method has been used to investigate the physics of an SOI nano flash memory device, which is composed of a triangular channel PMOSFET with a floating gate embedded in the gate oxide. The simulation shows that the control gate geometry first induces the formation of an inversion channel on the top of the triangle and, at higher gate voltages, on the two upper sides of the triangle. The programming and erasing simulations of the device reveal that the injection of eight holes to the floating gate causes the threshold voltage shift to -1.6V.
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