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METHODS OF FORMING NANO-SCALE PORES, NANO-SCALE ELECTRICAL CONTACTS, AND MEMORY DEVICES INCLUDING NANO-SCALE ELECTRICAL CONTACTS, AND RELATED STRUCTURES AND DEVICES
METHODS OF FORMING NANO-SCALE PORES, NANO-SCALE ELECTRICAL CONTACTS, AND MEMORY DEVICES INCLUDING NANO-SCALE ELECTRICAL CONTACTS, AND RELATED STRUCTURES AND DEVICES
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机译:形成纳米尺度的孔,纳米尺度的电接触和包括纳米尺度的电接触的存储器的方法以及相关的结构和设备
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摘要
Electrical contacts may be formed by forming dielectric liners along sidewalls of a dielectric structure, forming sacrificial liners over and transverse to the dielectric liners along sidewalls of a sacrificial structure, selectively removing portions of the dielectric liners at intersections of the dielectric liners and sacrificial liners to form pores, and at least partially filling the pores with a conductive material. Nano-scale pores may be formed by similar methods. Bottom electrodes may be formed and electrical contacts may be structurally and electrically coupled to the bottom electrodes to form memory devices. Nano-scale electrical contacts may have a rectangular cross-section of a first width and a second width, each width less than about 20 nm. Memory devices may include bottom electrodes, electrical contacts having a cross-sectional area less than about 150 nm2 over and electrically coupled to the bottom electrodes, and a cell material over the electrical contacts.
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