Designing a Broad-Area Optically-Pumped Holographic Vertical Cavity Surface Emitting Laser (HVCSEL)

摘要

The basis for the HVCSEL structures that are considered consist of a 1μm GaAs active layer sandwiched between two Bragg stacks. The linear, nonlinear, and holographic properties of the HVCSEL were calculated using the transfer matrix approach. For holographic films to operate as wide-area devices, the readable bandwidth of the hologram must be as large as possible. This reduces the dependence on laser tuning requirements and helps in overcoming spatially varying shifts in the cavity resonance position caused by thickness variations in the thin film. Designing the structure with low mirror reflectances (sqrt(R_1R_2) = 95%) gives a cavity resonance bandwidth of nearly 2 nm which is sufficiently broad to allow hologram readout over an area of several square millimeters. The material properties were fixed and the optical properties were then calculated for several structures with different Bragg stack stoichiometry and the best design was obtained.