Electrical and Noise Characterization of Large-Grain Polycrystalline Silicon Thin-Film Transistors

摘要

The electrical and noise properties of excimer laser annealed polysilicon thin-film transistors arc investigated in relation to the film thickness and the laser energy density. It is demonstrated that the device parameters, such as turn-on voltage V_(ON) and subthreshold swing S, are improved with increasing the energy laser density. The experimental data show that the parameters VON and S are film-thickness dependent in n-channel devices and film-thickness independent in p-channcl transistors. The low-frequency noise data indicated that the existing model of carrier number fluctuations model has to be modified taking into account bulk traps within the polysilicon layer.