柔性低温多晶硅薄膜晶体管的弯曲稳定性

摘要

The bias stability of the flexible thin-film transistors under various bending radii was investigated.The thin-film transistors with p-type low temperature poly-silicon channel layers were fabricated on polyimide substrate.The changing region of the bending radius was from 15 mm to 3 mm.For the stretch bending, the threshold voltage kept the same with the flat(Vth=-1.34 V), the mobility reduced from 45.65 cm2/(V·s) to 45.17 cm2/(V·s), and Ion/Ioff increased.For the compress bending, the transfer curve well kept the same with the flat.When the minimum bending radius was 3 mm, the device was tested under the positive and negative bias stress, and showed good stability.The experiment results indicate that the flexible LTPS-TFTs have fine performance and stability.%研究了以聚酰亚胺为基板的p型低温多晶硅薄膜晶体管在不同弯曲半径下的偏压稳定性.当曲率半径从15 mm变到3 mm时,在拉伸弯曲状态下,阈值电压和平坦时保持一致(Vth=-1.34 V),迁移率μsat从45.65 cm2/(V·s)降到45.17 cm2/(V·s),开关比增大;在压缩弯曲状态下,转移特性曲线和平坦状态保持了非常好的一致性.在最小弯曲半径为3 mm时,进行了正负偏压稳定性测试,结果表明,器件依然具有很好的稳定性.