Comparison of Deposited Polycrystalline Films and Crystallized Silicon from a-Si: Films

摘要

In this work, we present a comparison study between a crystallized hydrogenated amorphous silicon and deposited polycrystalline silicon. All the silicon films are deposited by DC magnetron sputtering on the quartz substrate at high rate around 15 A/s in a plasma gas argon/hydrogen mixture. The crystallized film shows a Raman spectrum with a centered peak at 518 cm~(-1) with a half width of 9.4 cm~(-1) . The high deposition temperature silicon films shows a polycrystalline structure which exhibits a Raman peak centered at 522 cm~(-1) with a half width of about 7.2 cm~(-1). The difference between the crystallized films and the deposited film, observed on the Raman spectrum, is also observed on the electrical measurements. The behavior of the electrical conductivity versus the temperature shows a little difference on the activation energy, The main difference is observed on the electrical conductivity value. The deposited polycrystalline silicon films has a much higher value.