Electrochemically Deposited Pd-Induced Crystallization of Parallel Needlelike Polycrystalline Silicon from Prepatterned Amorphous Silicon Thin Films

摘要

Electrochemically deposited Pd-induced crystallization of prepatterned amorphous silicon (a-Si) thin films was proposed for the first time in this study. Most of palladium clusters were found to deposit on the sidewall of the amorphous-silicon islands. After samples were annealed at 530 deg C, parallel needlelike polycrystalline silicon grains were observed on the a-Si film with a constant angle of approx 55 deg C from the edge. The direction of the primary grain growth was along <211> and the secondary growth occurred along <011> direction.