Low Temperature Deposition of Ba{sub}0.96Ca{sub}0.04Ti{sub}0.84Zr{sub}0.16O{sub}3 Thin Films on Pt Electrodes by RF Magnetron Sputtering

摘要

Ba{sub}0.96Ca{sub}0.04Ti{sub}0.84Zr{sub}0.16O{sub}3 (BCTZ) films acceptor-doped with 0.8 at.% Sc were deposited on Pt/TiO{sub}2/SiO{sub}2/Si substrates using if magnetron sputtering. Substrate temperatures throughout the fabrication process remained at or below 450°C, which allows this process to be compatible with many materials commonly used in IC manufacturing. In addition, this process made no use of oxygen in the sputter gas or in annealing atmospheres and thus it remains compatible with easily oxidized materials. A relative dielectric constant of 166 was achieved along with a loss tangent of 0.006 to 0.17 at 10 kHz. The tunability of the dielectric constant was greater than 50%. Leakage current densities of 1.6～10{sup}(-8) A/cm{sup}2 were observed at 300K with 300 kV/cm of applied electric field. In comparison, Ba{sub}(1-x)Sr{sub}xTiO{sub}3 (BST) films prepared under similar conditions show much greater leakage.