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Low temperature deposition of Ba_0.4 Sr_0.6 TiO_3 thin films on LaNiO_3-buffered electrode by rf magnetron sputtering

机译:射频磁控溅射在LaNiO_3缓冲电极上低温沉积Ba_0.4 Sr_0.6 TiO_3薄膜

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摘要

Sputter-deposited LaNiO_3 (LNO) was used as a conductive buffer layer for the deposition of 80 nm thick (Ba_0.4 Sr_0.6)TiO_3 (BST) thin films of Pt/Ti/SiO_2/Si substrates by rf magnetron sputtering. Smooth and highly (100)-oriented perovskite films of BST were grown on the (100)-textured LNO by deposition at temperatures ≥200 deg. C. However, a relatively rough and weakly crystallized BST film was obtained by deposition directly on Pt/ Ti/SiO_2/Si substrates at 500 deg. C. A stoichiometric composition of BST films was closely reached by using the target having 30-40 mol/100 enrichment of Ba + Sr.
机译:溅射沉积的LaNiO_3(LNO)用作导电缓冲层,用于通过rf磁控溅射沉积80 nm厚的Pt / Ti / SiO_2 / Si衬底的(Ba_0.4 Sr_0.6)TiO_3(BST)薄膜。通过在≥200度的温度下沉积,在(100)纹理化的LNO上生长出光滑且高度(100)取向的钙钛矿钙钛矿薄膜。然而,通过在500度下直接沉积在Pt / Ti / SiO_2 / Si衬底上获得了相对粗糙且微弱结晶的BST膜。通过使用具有30-40 mol / 100的Ba + Sr富集的靶标,可以近乎达到BST膜的化学计量组成。

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