Microwave evaluation of Pb_(0.4)Sr_(0.6)TiO_3 thin films prepared by magnetron sputtering on silicon: Performance comparison with Ba_(0.3)Sr_(0.7)TiO_3 thin films

摘要

Pb_(0.4)Sr_(0.6)TiO_3 (PST) thin films were deposited on high resistivity silicon substrate by radio frequency magnetron sputtering. A pure perovskite phase was obtained at a low post annealing temperature of 650℃. The relative dielectric constant, loss factor, tenability, and figure of merit were determined over a large frequency range of 1 GHz to 60 GHz. A large tunability about 60% and a relatively low loss of 16% at 60 GHz were obtained. PST is an alternative material for microwave agile devices integrated with silicon and this is discussed from the standpoint of monolithic integration with a low thermal budget.