首页> 外文期刊>Journal of materials science >Tunable, low loss Ba_(0.6)Sr_(0.4)TiO_3/Bi_(1.5)Mg_(1.0)Nb_(1.5)O_7/Ba_(0.6)Sr_(0.4)TiO_3 multilayer thin films prepared by pulsed laser deposition
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Tunable, low loss Ba_(0.6)Sr_(0.4)TiO_3/Bi_(1.5)Mg_(1.0)Nb_(1.5)O_7/Ba_(0.6)Sr_(0.4)TiO_3 multilayer thin films prepared by pulsed laser deposition

机译:通过脉冲激光沉积制备的可调谐低损耗Ba_(0.6)Sr_(0.4)TiO_3 / Bi_(1.5)Mg_(1.0)Nb_(1.5)O_7 / Ba_(0.6)Sr_(0.4)TiO_3多层薄膜

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摘要

Ba_(0.6)Sr_(0.4)TiO_3/Bi_(1.5)Mg_(1.0)Nb_(1.5)O_7/Ba_(0.6)Sr_(0.4)TiO_3 (BST/BMN/BST) multilayer thin films and Ba_(0.6)Sr_(0.4)TiO_3 (BST) thin films were fabricated on Pt/Ti/SiO_2/Si (1 0 0) substrates by pulsed laser deposition. The multilayer thin films show a dielectric constant of 314 and dielectric loss tangent of 0.006 at frequency of 0.1 MHz. The BST/BMN/BST multilayer thin films had a ~ 26.7 % relative tunability of dielectric constant at a maximum applied dc bias field of 357 kV/cm, while the figure of merit is 45.5. No obvious hysteresis behavior was observed in the BST/BMN/BST multilayer thin films. The excellent dielectric constant and tunability, low dielectric loss tangent suggest that BST/BMN/BST multilayer thin films have giant potential application for tunable microwave device.
机译:Ba_(0.6)Sr_(0.4)TiO_3 / Bi_(1.5)Mg_(1.0)Nb_(1.5)O_7 / Ba_(0.6)Sr_(0.4)TiO_3(BST / BMN / BST)多层薄膜和Ba_(0.6)Sr_(通过脉冲激光沉积在Pt / Ti / SiO_2 / Si(1 0 0)衬底上制备了0.4)TiO_3(BST)薄膜。多层薄膜在0.1MHz的频率下显示出314的介电常数和0.006的介电损耗角正切。在最大施加直流偏置电场为357 kV / cm时,BST / BMN / BST多层薄膜的介电常数相对可调率为〜26.7%,而品质因数为45.5。在BST / BMN / BST多层薄膜中未观察到明显的磁滞行为。优异的介电常数和可调性,低介电损耗正切值表明BST / BMN / BST多层薄膜在可调微波器件中具有巨大的应用潜力。

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  • 来源
    《Journal of materials science》 |2016年第8期|7947-7952|共6页
  • 作者单位

    Key Laboratory of Photovoltaic Materials of Henan Province and School of Physics and Electronics, Henan University, Kaifeng 475001, People's Republic of China;

    Key Laboratory of Photovoltaic Materials of Henan Province and School of Physics and Electronics, Henan University, Kaifeng 475001, People's Republic of China;

    Key Laboratory of Photovoltaic Materials of Henan Province and School of Physics and Electronics, Henan University, Kaifeng 475001, People's Republic of China;

    Key Laboratory of Photovoltaic Materials of Henan Province and School of Physics and Electronics, Henan University, Kaifeng 475001, People's Republic of China;

    Key Laboratory of Photovoltaic Materials of Henan Province and School of Physics and Electronics, Henan University, Kaifeng 475001, People's Republic of China;

    Key Laboratory of Photovoltaic Materials of Henan Province and School of Physics and Electronics, Henan University, Kaifeng 475001, People's Republic of China;

    Key Laboratory of Photovoltaic Materials of Henan Province and School of Physics and Electronics, Henan University, Kaifeng 475001, People's Republic of China;

  • 收录信息 美国《科学引文索引》(SCI);美国《工程索引》(EI);美国《生物学医学文摘》(MEDLINE);
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  • 正文语种 eng
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