首页> 外文期刊>Applied Physics Letters >Tunable, low loss Bi_(1.5)Zn_(1.0)Nb_(1.5)O_7/Ba_(0.6)Sr_(0.4)TiO_3/Bi_(1.5)Zn_(1.0)Nb_(1.5)O_7 sandwich films
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Tunable, low loss Bi_(1.5)Zn_(1.0)Nb_(1.5)O_7/Ba_(0.6)Sr_(0.4)TiO_3/Bi_(1.5)Zn_(1.0)Nb_(1.5)O_7 sandwich films

机译:可调谐,低损耗Bi_(1.5)Zn_(1.0)Nb_(1.5)O_7 / Ba_(0.6)Sr_(0.4)TiO_3 / Bi_(1.5)Zn_(1.0)Nb_(1.5)O_7夹心膜

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摘要

Bi_(1.5)Zn_(1.0)Nb_(1.5)O_7/Ba_(0.6)Sr_(0.4)TiO_3/Bi_(1.5)Zn_(1.0)Nb_(1.5)O_7 (BZN/BST/BZN) sandwich films were deposited by radio frequency magnetron sputtering. The relative permittivity and dielectric loss of the sandwich films were measured using planar Pt/BZN/BST/BZN/Pt/Ti/SiO_2/Si capacitor structures. The sandwich films with thickness of about 280 nm exhibited relative permittivity around 206-247 and dielectric loss tangent (tan δ) less than 0.008 at 1 MHz. Films annealed at 750℃ had an ~11% relative tunability of the permittivity at a maximum applied bias field of 0.77 MV/cm. The sandwich films are not ferroelectric at room temperature.
机译:通过无线电沉积Bi_(1.5)Zn_(1.0)Nb_(1.5)O_7 / Ba_(0.6)Sr_(0.4)TiO_3 / Bi_(1.5)Zn_(1.0)Nb_(1.5)O_7(BZN / BST / BZN)三明治膜磁控溅射。使用平面Pt / BZN / BST / BZN / Pt / Ti / SiO_2 / Si电容器结构测量夹层膜的相对介电常数和介电损耗。厚度约为280 nm的夹层膜在1 MHz时的相对介电常数约为206-247,介电损耗角正切(tanδ)小于0.008。在750℃退火的薄膜在最大施加偏压场为0.77 MV / cm时,介电常数的相对可调性为〜11%。夹层膜在室温下不是铁电的。

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