Photoluminescence Study of defects induced by B_10H_14 ions

摘要

Defect formation in Si by B_10H_14 (decaborane) ion implantation has been investigated with photoluminescence measurement.An intense W-line was observed at photon energy of 1.018eV from as-implanted FZ-Si by 30keV B_10H_14~+ implantation.W-line center is considered as low-tempreature annealing in the case of atomic ion implantation.As W-line is observed form as-implanted Si,the defect formation with B_10H_14 is expected to be different from that of B~+ implantation with the same energy per atom.