Effects of impurity-free intermixing on InGaAs/GaAs/AlGaAs broad-area diode laser characteristics

摘要

Broad-area InGaAs/GaAs/AlGaAs double-quantum-well graded-index separate-confinement heterostructure diode lasers with non-intermixed and intermixed active regions were fabricated and characterized. Their light-current characteristics were used to extract information about the effects of impurity-free vacancy diffusion intermixing process on threshold current density, internal optical loss, internal quantum efficiency, material gain, etc. Comparison between these parameters indicates comparable device performance, even though lasers with intermixed active region underwent annealing at 1000 °C for 30 s and showed 42 nm wavelength blueshift.