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机译:具有无杂质混合有源区的高性能InGaAs-GaAs-AlGaAs广域二极管激光器
Center for High Technol. Mater., Univ. of New Mexico, Albuquerque, NM, USA;
quantum well lasers; indium compounds; gallium arsenide; aluminium compounds; III-V semiconductors; chemical interdiffusion; optical losses; semiconductor quantum wells; current density; annealing; spectral line shift; optical fabrication; optical testing; laser variables measurement; InGaAs-GaAs-AlGaAs diode lasers; double-quantum-well heterostructure lasers; graded-index separate-confinement heterostructure lasers; intermixed active regions; impurity-free vacancy diffusion; light-current characteristics; threshold current density; internal optical loss; internal quantum efficiency; material gain; annealing; wavelength blueshift; 42 nm; InGaAs-GaAs-AlGaAs;
机译:具有无杂质混合有源区的高性能InGaAs-GaAs-AlGaAs广域二极管激光器
机译:高性能IngaAs-GaAs-Algaas宽面积二极管激光器,具有无杂质的混合有源区
机译:高性能IngaAs-GaAs-Algaas宽面积二极管激光器,具有无杂质的混合有源区
机译:无杂质混合对InGaAs / GaAs / AlGaAs广域二极管激光器性能的影响
机译:二极管激光器中高应变低维有源区的特性。
机译:II型InAs / GaInAsSb量子阱中的界面混合设计用于中红外发射带间级联激光器的有源区域
机译:高性能,可靠,730nm发射的无铝有源区二极管激光器
机译:数字合金成分分级技术在应变InGaas / Gaas / alGaas二极管激光有源区的应用