Effects of pulsed anodic oxide on the intermixing in InGaAs/GaAs and LnGaAs/AlGaAs quantum wells

摘要

Intermixing in InGaAs/AlGaAs quantum well structures was studied with and without an anodic oxide cap by rapid thermal annealing. Blueshifts in the photoluminescence (PL) energy were observed. Anodic oxide was demonstrated to suppress the blueshift noticeably. The suppression of the blueshift was attributed to a strain reduction.