Growth and Characterization of crack-free GaN films grown on cracked Si-doped GaN templates

摘要

Continuous GaN films were grown on the top of cracked Si-doped n~+-GaN epilayers by MOCVD techniques. Raman-scattering studies of the samples indicated strain-free top GaN film. The biaxial compressive stress estimated by using X-ray diffraction analysis was as low as 0.036 GPa for sample grown under optimized conditions. The results obtained show that the use of an intermediate relaxed n~+-GaN:Si layer is perspective for growing high quality GaN films.