A low-power RF wideband amplifier is presented. It has a 24.3dB power gain, -3dB bandwidth of 3.2GHz, and consumes 23.7mW power with a 2V power supply. The circuit is implemented using Si bipolar process, NT25, which has f{sub}T of 25GHz. Both input and output impedances are matched at 50 ohms. This amplifier is suitable for applications that require wide bandwidth and high linearity in the range of 1 to 3 GHz.
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