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Low-noise wideband amplifiers with DC loops, which have substrate transistors biased transistors

机译:具有DC环路的低噪声宽带放大器,具有衬底晶体管,偏置晶体管

摘要

Methods form amplifier device structures comprising first to third amplifier devices. The first amplifier device generates an intermediate signal. The second amplifier device is connected to an input of the first amplifier device and generates an amplified inverted output signal. The third amplifier device inverts the intermediate signal to produce an amplified non-inverted output signal which is complementary to the amplified inverted output signal. A resistance feedback loop is connected to the input and output of the first amplifier device. An amplification ratio of the gain of the third amplifier device to the gain of the second amplifier device coincides with a resistance ratio of the source resistance of the input signal to the resistance of the resistance added to the source resistance. DC loop circuits are also connected to the first to third amplifier devices, and each of the DC loop circuits connects an amplifier device output to an amplifier device input.
机译:方法形成包括第一至第三放大器设备的放大器设备结构。第一放大器装置产生中间信号。第二放大器设备连接到第一放大器设备的输入,并产生放大的反相输出信号。第三放大器装置对中间信号进行反相以产生与经放大的反相输出信号互补的经放大的同相输出信号。电阻反馈回路连接到第一放大器设备的输入和输出。第三放大器装置的增益与第二放大器装置的增益的放大比与输入信号的源极电阻与加到源极电阻上的电阻的电阻的电阻比一致。 DC回路电路也连接到第一至第三放大器设备,并且每个DC回路电路将放大器设备的输出连接到放大器设备的输入。

著录项

  • 公开/公告号DE102019203993A1

    专利类型

  • 公开/公告日2019-10-24

    原文格式PDF

  • 申请/专利权人 GLOBALFOUNDRIES INC.;

    申请/专利号DE201910203993

  • 发明设计人 KONSTANTINOS MANETAKIS;THOMAS G. MCKAY;

    申请日2019-03-25

  • 分类号H03F3/189;H03F1/42;H03F1/26;

  • 国家 DE

  • 入库时间 2022-08-21 11:44:22

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