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Low-noise wideband amplifiers with DC loops, which have substrate transistors biased transistors
Low-noise wideband amplifiers with DC loops, which have substrate transistors biased transistors
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机译:具有DC环路的低噪声宽带放大器,具有衬底晶体管,偏置晶体管
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摘要
Methods form amplifier device structures comprising first to third amplifier devices. The first amplifier device generates an intermediate signal. The second amplifier device is connected to an input of the first amplifier device and generates an amplified inverted output signal. The third amplifier device inverts the intermediate signal to produce an amplified non-inverted output signal which is complementary to the amplified inverted output signal. A resistance feedback loop is connected to the input and output of the first amplifier device. An amplification ratio of the gain of the third amplifier device to the gain of the second amplifier device coincides with a resistance ratio of the source resistance of the input signal to the resistance of the resistance added to the source resistance. DC loop circuits are also connected to the first to third amplifier devices, and each of the DC loop circuits connects an amplifier device output to an amplifier device input.
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