Development of a Wideband Low-Noise L-Band Transistor Amplifier.

摘要

At microwave frequencies,the recently developed small signal arsenic-diffused-emitter transistors offer high gain,reasonable compression levels,and low noise figure at low-bias levels. These characteristics make them attractive for use in low-noise preamplifiers in RF front ends of a multiport phased-array radar receiver. This report describes the development of a two-stage common-emitter amplifier,operating between 800and 1400MHz,using conventional microstrip techniques having a spot noise figure less than 4.00dB,at a gain of 26.5dB. Computer-aided design routines were used to obtain final designs from transistor S-parameters. Noise figure and stability criteria are discussed. (Author)