Application of single contact optical beam induced currents (SCOBIC) for backside failure analysis

摘要

The Single Contact Optical Beam Induced Currents (SCOBIC) is a new failure analysis technique, which allows the imaging of junctions by a single connection to the substrate or power pin of an integrated circuit. Modern packaging technologies and multi-layer metallizations has increased the need for backside IC failure analysis. In this paper, the SCOBIC technique is used to image junctions from the die backside. The implementation of backside SCOBIC system is discussed. Application of the SCOBIC technique from both the frontside and backside of CMOS and NMOS devices are presented.