MOCVD OF WN_x THIN FILMS USING NOVEL IMIDO PRECURSORS

摘要

Novel single-source metal-organic precursors have been successfully used to deposit tungsten nitride thin films on Si(l00) and Si(111) substrates. Eight different precursor compounds were examined with the best results originating from Cl_4(CH_3CN)WN-i-Pr and Cl_4(CH_3CN)WN-t-Bu. Films were deposited as low as 400°C at vacuum levels between 150 and 760 Torr. XRD, AES, SEM, 4-point probe, and SMS were used to characterize the films. A microcrystalline grain structure was observed using XRD. Results revealed thin film resistivity values as low as 447μΩ-cm. Growth rates were estimated to vary from 2.2-21μm/hr depending on the precursor complex and its flowrate to the ultrasonic nebulizing delivery system. Although high carbon contamination originating from the metal-organic precursor was routinely detected using AES, it did not appear to significantly increase the tungsten nitride resistivity value.