MOCVD of tungsten nitride (WN_x) thin films from the imido complex Cl_4(CH_3CN)W(N~iPr)

摘要

Thin films of tungsten nitride (WN_x) were deposited by MOCVD from the single-source precursor Cl_4(CH_3CN)W(N~iPr). Films were analyzed by X-ray diffraction (XRD), Auger electron spectroscopy (AES) and cross-section scanning electron microscopy (X-SEM), while the film resistivity was determined by four-point probe. Film growth rates ranged from 10 to 27 A/min within a temperature range of 450-700℃. The apparent activation energy for film growth in the kinetically controlled regime was 0.84eV. Films grown at temperatures below 500℃ were amorphous, with minimum film resistivity and sheet resistance of 750 μΩ cm and 47 Ω/□, respectively, occurring for deposition at 450℃.