SOURCE ALTERNATE MOCVD PROCESS OF DEPOSITING TUNGSTEN NITRIDE THIN FILM AS BARRIER LAYER FOR MOCVD COPPER INTERCONNECTION

摘要

PROBLEM TO BE SOLVED: To form a WN barrier layer having high density, low resistivity, and extremely fine crystal grains or an amorphous structure.;SOLUTION: The process is a source alternate CVD (Chemical Vapor Deposition) process for forming a WN barrier layer, and includes: a stage (a) where a substrate is heated inside a CVD chamber; a stage (b) where an alternate source W(CO)₆ precursor is introduced into the CVD chamber; and a stage (c) where an NH₃ source is introduced into the chamber. The process further includes a stage where the W(CO)₆ and NH₃ are reacted, and WN is deposited on the heated substrate.;COPYRIGHT: (C)2004,JPO&NCIPI