MOCVD of WNx thin films using imido precursors

摘要

Single imido tungsten imido precursors are described for the deposition of tungsten nitride on a substrate by processes such as metal organic chemical vapor deposition. The precursors may be employed to form diffusion barrier layers on microelectronic devices. A method for forming tungsten nitride layers includes the steps of providing a tungsten imido species having the formula L_yW(NR)X_n, where R is a carbon containing group, y is an integer between 0 and 5, n is an integer between 0 and 4 and L_y and X_n are selected from the group of non-imido ligands. The single imido tungsten imido species is flowed to a surface of a substrate where the single imido tungsten imido species decomposes to form a tungsten nitride layer.