MULTILAYERS FOR THE GROWTH OF HTc SUPERCONDUCTING TAPE: A FULL MOCVD APPROACH

摘要

Multilayer structures LaAlO_3/Pt(100) and CeO_2 (100)/Pt(100) have been grown on Hastelloy C276 by metal-organic chemical vapor deposition (MOCVD). The Pt films have been grown at 280°C using the volatile p-diketonate Pt(acac)2. They are <100> oriented with very smooth and homogeneous surfaces. The "second-generation" lanthanum and cerium precursors (M(hfa)_3 conter dot diglyme) [M= La(Ⅲ), Ce(Ⅲ)] have been successfully used for growing LaAlO_3 and CeO_2 layers on Pt(l00). A two-step route, has been used for LaAlO_3 since there is evidence of severe interdiffusion in the one-step, higher temperature, approach. <100> Oriented CeO_2 films can be easily deposited on Pt(l00) at 450°C. These preliminary results indicate that full MOCVD processes represent promising strategies for the superconducting conductors.