CVD-EPITAXIAL GROWTH ON POROUS Si FOR ELTRAN~R SOI-EPI WAFERS~(TM)

摘要

CVD-epitaxial growth on porous Si was investigated to control the quality of ELTRAN~R SOI-Epi wafers~(TM). The stacking fault was the major defect, and was controlled by sealing surface pores of porous Si. H_2 prebaking sealed the most pores, but generated enlarged residual pores, and resulted in high defect density of 10~4 cm~(-2). On the other hands, a small amount of Si supply on unsealed porous surface sealed the pores by 3 dimensional island growth, and subsequent coalescence. This peculiar behavior during the initial stage of CVD epitaxial growth on porous Si reduced the stacking faults to 27 cm~(-2).