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EFFECT OF H_2S ON THE MICROSTRUCTURE AND DEPOSITION CHARACTERISTICS OF CHEMICALLY VAPOUR DEPOSITED A1_2O_3

机译:H_2S对化学气相沉积A1_2O_3的微观结构和沉积特性的影响

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The influence of experimental variables in combination with catalysis on the growth and microstructure of CVD K-Al_2O_3 was investigated. The Al_2O_3 coatings were deposited in the temperature range of 800-1000°C and at pressures of 50 to 400 mbar. Hydrogen sulphide (H_2S) was used as a doping/catalysing agent. General deposition characteristics of K-Al_2O_3 as a function of temperature, pressure and H_2S concentration are reported. In general, K-Al_2O_3 deposited at different process conditions did not exhibit any pronounced microstructural or morphological differences. However, at deposition temperature of 800°C together with higher doping levels (H_2S>0.8%) γ-Al_2O_3 was obtained. Enrichment of sulphur could be confirmed to occur inγ-Al_2O_3 while no sulphur was found in K-A1_2O_3.
机译:研究了实验变量与催化对CVD K-AL_2O_3的生长和微观结构的影响的影响。将Al_2O_3涂层沉积在800-1000℃的温度范围内,压力为50至400毫巴。硫化氢(H_2S)用作掺杂/催化剂。报道了K-Al_2O_3作为温度,压力和H_2S浓度的函数的一般沉积特性。通常,在不同的过程条件下沉积的K-Al_2O_3没有表现出任何明显的微观结构或形态差异。然而,在800℃的沉积温度下,较高掺杂水平(H_2S> 0.8%)获得γ-Al_2O_3。可以确认在γ-Al_2O_3中确认硫的富集,而在K-A1_2O_3中没有发现硫。

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