High throughput UHV/CVD SiGe and SiGe:C process for SiGe HBT and strained Si FET

摘要

A high throughput SiGe UHV/CVD system is demonstrated. Due to the excellent uniformity of thickness and Ge concentration in within a wafer, wafer to wafer and run-to-run, this system is suitable for manufacture with the throughput of 14 200-mm wafers per hour for the typical HBT structure. The UHV/CVD can fabricate low temperature Si, strained Si{sub}(1-x)Ge{sub}x, strained Si{sub}(1-x)Ge{sub}x :C, Si{sub}(1-y)C{sub}y, and relaxed SiGe buffers. Various devices with good performance are fabricated by the UHVICVD system, including HBTs, heterojuction phototransistor, strained Si MOSFET, photodetectors, quantum dot photodetectors with 6-9 μm responsivity, and strained SiGe MOSFET.